1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 jiangsu changjiang electronics technology co., ltd sot-23-3l plastic-encapsulate transistors 2sc3052 transistor (npn) features power dissipation p cm : 0.15 w (tamb=25 ) collector current i cm : 0.2 a collector-base voltage v (br)cbo : 50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=100 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic= 100 a, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 6 v collector cut-off current i cbo v cb =50 v , i e =0 0.1 a emitter cut-off current i ebo v eb = 6v , i c =0 0.1 a h fe(1) v ce =6v, i c =1ma 150 800 dc current gain h fe(2) v ce =6v, i c =0.1ma 50 collector-emitter saturation voltage v ce(sat) i c =100 ma, i b =10ma 0.3 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =6v, i c = 10ma 180 mhz classification of h fe (1) marking le lf lg range 150-300 250-500 400-800 sot-23-3l 1. base 2. emitter 3. collector
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